Direct observation of charge carrier dynamics
The general methodology of time-resolved photoluminescence can be expanded by lifetime imaging of the charge carrier dynamics. This can be exploited for, e.g., determining the effect of carrier diffusion and its influence on the total lifetime measured in conjunction with intensity dependent photoluminescence lifetimes measurements. It brings an exceptional component to semiconductor analysis with respect to material and architectural substructures, spatial inhomogenities and process dependent morphology. Using TRPL imaging, charge carrier diffusion processes and the effect of localized inhomogeneities and defect sites can be identified. With this multi-dimensional approach, a versatile and powerful methodology for the analysis of semiconductor materials can be achieved.