Time-Resolved Photoluminescence (TRPL)
Charge carrier dynamics in semiconductors
Charge carrier dynamics in semiconductors are determined by the architecture and function of the respective device and directly reflect the nature and quality of wafer materials. This makes precise and efficient measurement techniques of the free charge carrier lifetime essential for characterizing these systems. For particular classes of semiconductors, the characteristic charge carrier lifetime is highly dependent on the nature and dimensions of the materials and interfaces involved. Furthermore, surface effects, passivation and the energy transfer efficiency of sensitizers as well as the presence of dopants, impurities and defect sites can introduce significant variations in this parameter. Since the photoluminescence of semiconductors is a direct monitor of the charge carrier dynamics, the general methodology of time-resolved photo-luminescence (TRPL) via time-correlated single photon counting (TCSPC) and the periphery technology are highly suited for the analysis of the phenomena that determine fast charge carrier dynamics in a semiconductor. As a result, the mechanism that determines the charge carrier dynamics within a particular system can be characterized directly down to the sub-nanosecond time scale.